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Postdoctoral Position -- Compound semiconductor for future CMOS gate stacks

About the position:
A postdoctoral position for research and development of novel materials for Silicon CMOS technology is available in the 'Advanced Functional Materials' group at the IBM Zurich Research Laboratory. The 'Advanced Functional Materials' project aims to develop materials used in field effect transistors for future CMOS generations. The group has a long standing expertise with the growth of oxides by Molecular Beam Epitaxy (MBE) and with their structural and electrical characterization. The study of semiconducting channels with higher carrier mobility than silicon is today of particular interest. We have recently started a project to fabricate gate stacks combining compound semiconductor channels and "high-k" oxide dielectrics, with the use of a 200mm MBE cluster combining III-V, Ge and oxide deposition capabilities.

Requirements:
The successful candidate will have a PhD in physics or materials science and handson experience in the fields of III-V Molecular Beam Epitaxy (MBE), in particular for GaAs-based heteroepitaxial structures. Besides a strong growth expertise, a practical experience with the electrical characterization of HEMT devices will be positively considered. The candidate should actively contribute to the development of GaAs-based MOSFETs. The ability to work in a multicultural team and good communication skills are prerequisites. The open postdoctoral position is limited to 18 months.

Please send a letter of application detailing your qualification together with a curriculum vitae, a list of publications, two references and any other relevant information to:
Dr. Jean Fompeyrine
IBM Zurich Research Laboratory
Saeumerstrasse 4
CH-8803 Rueschlikon
Switzerland
Tel.: ++41-(0)1-724-8387
e-mail:  jfo@zurich.ibm.com